JANTX2N6058 Overview

This device has a DC current gain of 1000 @ 6A 3V, which is the ratio between the base current and the collector current.The collector emitter saturation voltage is 3V, which allows for maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The base voltage of the emitter can be kept at 5V to achieve high efficiency.Single BJT transistor is possible for the collector current to fall as low as 12A volts at Single BJT transistors maximum.

JANTX2N6058 Features

the DC current gain for this device is 1000 @ 6A 3V
a collector emitter saturation voltage of 3V
the vce saturation(Max) is 3V @ 120mA, 12A
the emitter base voltage is kept at 5V

JANTX2N6058 Applications

There are a lot of Microsemi Corporation JANTX2N6058 applications of single BJT transistors.

• Inverter
• Driver
• Interface
• Muting