2SD2226KT146V Overview
In this device, the DC current gain is 820 @ 1mA 5V, which is the ratio between the base current and the collector current.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 300mV, which allows maximum flexibilSingle BJT transistory in design.A VCE saturation (Max) of 300mV @ 5mA, 50mA means Ic has reached its maximum value(saturated).Maintaining the continuous collector voltage at 150mA is essential for high efficiency.Keeping the emitter base voltage at 12V allows for a high level of efficiency.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 150mA for this device.Parts of this part have transition frequencies of 250MHz.Single BJT transistor can be broken down at a voltage of 50V volts.During maximum operation, collector current can be as low as 150mA volts.
2SD2226KT146V Features
the DC current gain for this device is 820 @ 1mA 5V
a collector emitter saturation voltage of 300mV
the vce saturation(Max) is 300mV @ 5mA, 50mA
the emitter base voltage is kept at 12V
the current rating of this device is 150mA
a transition frequency of 250MHz
2SD2226KT146V Applications
There are a lot of ROHM Semiconductor 2SD2226KT146V applications of single BJT transistors.
- Interface
- Driver
- Muting
- Inverter
