2SCR522UBTL Overview

As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 120 @ 1mA 2V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 300mV, which allows maximum flexibilSingle BJT transistory in design.A VCE saturation (Max) of 300mV @ 10mA, 100mA means Ic has reached its maximum value(saturated).Continuous collector voltages of 200mA should be maintained to achieve high efficiency.With the emitter base voltage set at 5V, an efficient operation can be achieved.Parts of this part have transition frequencies of 400MHz.Single BJT transistor is possible to have a collector current as low as 200mA volts at Single BJT transistors maximum.

2SCR522UBTL Features

the DC current gain for this device is 120 @ 1mA 2V
a collector emitter saturation voltage of 300mV
the vce saturation(Max) is 300mV @ 10mA, 100mA
the emitter base voltage is kept at 5V
a transition frequency of 400MHz

2SCR522UBTL Applications

There are a lot of ROHM Semiconductor 2SCR522UBTL applications of single BJT transistors.

• Driver
• Interface
• Inverter
• Muting