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JANTX2N6650

  • JANTX2N6650
  • JANTX2N6650

JANTX2N6650

JANTX2N6650

Microsemi Corporation

JANTX2N6650 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Microsemi Corporation stock available on our website

SOT-23

JANTX2N6650 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 36 Weeks
Lifecycle Status IN PRODUCTION (Last Updated: 3 weeks ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-204AA, TO-3
Transistor Element Material SILICON
Operating Temperature -65°C~175°C TJ
Packaging Bulk
Published 2002
Series Military, MIL-PRF-19500/527
JESD-609 Code e0
Pbfree Code no
Part Status Discontinued
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Tin/Lead (Sn/Pb)
Terminal Position BOTTOM
Terminal Form PIN/PEG
Pin Count 2
JESD-30 Code O-MBFM-P2
Qualification Status Qualified
Number of Elements 1
Polarity PNP
Element Configuration Single
Case Connection COLLECTOR
Power - Max 5W
Transistor Type PNP - Darlington
Collector Emitter Voltage (VCEO) 80V
DC Current Gain (hFE) (Min) @ Ic, Vce 1000 @ 5A 3V
Current - Collector Cutoff (Max) 1mA
Vce Saturation (Max) @ Ib, Ic 3V @ 100μA, 10A
Current - Collector (Ic) (Max) 10A
Collector Emitter Saturation Voltage 2V
Collector Base Voltage (VCBO) 80V
Emitter Base Voltage (VEBO) 5V
Radiation Hardening No
RoHS Status Non-RoHS Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
500 $378.00000 $189000
JANTX2N6650 Product Details

JANTX2N6650 Overview


This device has a DC current gain of 1000 @ 5A 3V, which is the ratio between the base current and the collector current.With a collector emitter saturation voltage of 2V, it offers maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.

JANTX2N6650 Features


the DC current gain for this device is 1000 @ 5A 3V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 3V @ 100μA, 10A
the emitter base voltage is kept at 5V

JANTX2N6650 Applications


There are a lot of Microsemi Corporation JANTX2N6650 applications of single BJT transistors.

  • Driver
  • Muting
  • Interface
  • Inverter

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