KSA473O datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
KSA473O Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mounting Type
Through Hole
Package / Case
TO-220-3
Operating Temperature
150°C TJ
Packaging
Bulk
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Reach Compliance Code
compliant
Base Part Number
KSA473
Power - Max
10W
Transistor Type
PNP
DC Current Gain (hFE) (Min) @ Ic, Vce
70 @ 500mA 2V
Current - Collector Cutoff (Max)
1μA ICBO
Vce Saturation (Max) @ Ib, Ic
800mV @ 200mA, 2A
Voltage - Collector Emitter Breakdown (Max)
30V
Current - Collector (Ic) (Max)
3A
Frequency - Transition
100MHz
KSA473O Product Details
KSA473O Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 70 @ 500mA 2V DC current gain.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 800mV @ 200mA, 2A.Collector Emitter Breakdown occurs at 30VV - Maximum voltage.
KSA473O Features
the DC current gain for this device is 70 @ 500mA 2V the vce saturation(Max) is 800mV @ 200mA, 2A
KSA473O Applications
There are a lot of ON Semiconductor KSA473O applications of single BJT transistors.