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KSA473O

KSA473O

KSA473O

ON Semiconductor

KSA473O datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

KSA473O Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Through Hole
Package / Case TO-220-3
Operating Temperature 150°C TJ
Packaging Bulk
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Reach Compliance Code compliant
Base Part Number KSA473
Power - Max 10W
Transistor Type PNP
DC Current Gain (hFE) (Min) @ Ic, Vce 70 @ 500mA 2V
Current - Collector Cutoff (Max) 1μA ICBO
Vce Saturation (Max) @ Ib, Ic 800mV @ 200mA, 2A
Voltage - Collector Emitter Breakdown (Max) 30V
Current - Collector (Ic) (Max) 3A
Frequency - Transition 100MHz
KSA473O Product Details

KSA473O Overview


DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 70 @ 500mA 2V DC current gain.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 800mV @ 200mA, 2A.Collector Emitter Breakdown occurs at 30VV - Maximum voltage.

KSA473O Features


the DC current gain for this device is 70 @ 500mA 2V
the vce saturation(Max) is 800mV @ 200mA, 2A

KSA473O Applications


There are a lot of ON Semiconductor KSA473O applications of single BJT transistors.

  • Interface
  • Inverter
  • Muting
  • Driver

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