JANTXV2N3501L datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Microsemi Corporation stock available on our website
SOT-23
JANTXV2N3501L Datasheet
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Specifications
Name
Value
Type
Parameter
Lifecycle Status
IN PRODUCTION (Last Updated: 4 weeks ago)
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-205AA, TO-5-3 Metal Can
Number of Pins
3
Supplier Device Package
TO-5
Operating Temperature
-65°C~200°C TJ
Packaging
Bulk
Published
2007
Series
Military, MIL-PRF-19500/366
Part Status
Discontinued
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Max Operating Temperature
200°C
Min Operating Temperature
-65°C
Max Power Dissipation
1W
Power - Max
1W
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
400mV
Max Collector Current
300mA
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 150mA 10V
Current - Collector Cutoff (Max)
10μA ICBO
Vce Saturation (Max) @ Ib, Ic
400mV @ 15mA, 150mA
Collector Emitter Breakdown Voltage
150V
Voltage - Collector Emitter Breakdown (Max)
150V
Current - Collector (Ic) (Max)
300mA
Collector Base Voltage (VCBO)
150V
Radiation Hardening
No
RoHS Status
Non-RoHS Compliant
JANTXV2N3501L Product Details
JANTXV2N3501L Overview
In this device, the DC current gain is 100 @ 150mA 10V, which is the ratio between the base current and the collector current.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 400mV @ 15mA, 150mA.Supplier package TO-5 contains the product.A negative maximal voltage - Collector Emitter Breakdown can be observed in the device.When collector current reaches its maximum, it can reach 300mA volts.
JANTXV2N3501L Features
the DC current gain for this device is 100 @ 150mA 10V the vce saturation(Max) is 400mV @ 15mA, 150mA the supplier device package of TO-5
JANTXV2N3501L Applications
There are a lot of Microsemi Corporation JANTXV2N3501L applications of single BJT transistors.