JANTXV2N3635 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Microsemi Corporation stock available on our website
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JANTXV2N3635 Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
23 Weeks
Lifecycle Status
IN PRODUCTION (Last Updated: 3 weeks ago)
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-39
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-65°C~200°C TJ
Packaging
Bulk
Published
2007
Series
Military, MIL-PRF-19500/357
JESD-609 Code
e0
Pbfree Code
no
Part Status
Discontinued
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin/Lead (Sn/Pb)
Subcategory
Other Transistors
Max Power Dissipation
1W
Terminal Position
BOTTOM
Terminal Form
WIRE
Pin Count
2
Qualification Status
Qualified
Number of Elements
1
Configuration
SINGLE
Power Dissipation
1W
Transistor Application
SWITCHING
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
140V
Max Collector Current
1A
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 50mA 10V
Current - Collector Cutoff (Max)
10μA
Vce Saturation (Max) @ Ib, Ic
600mV @ 5mA, 50mA
Transition Frequency
200MHz
Collector Base Voltage (VCBO)
140V
Emitter Base Voltage (VEBO)
5V
Turn Off Time-Max (toff)
650ns
Turn On Time-Max (ton)
200ns
Radiation Hardening
No
RoHS Status
Non-RoHS Compliant
Lead Free
Contains Lead
JANTXV2N3635 Product Details
JANTXV2N3635 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 100 @ 50mA 10V.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 600mV @ 5mA, 50mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Parts of this part have transition frequencies of 200MHz.Single BJT transistor is possible for the collector current to fall as low as 1A volts at Single BJT transistors maximum.
JANTXV2N3635 Features
the DC current gain for this device is 100 @ 50mA 10V the vce saturation(Max) is 600mV @ 5mA, 50mA the emitter base voltage is kept at 5V a transition frequency of 200MHz
JANTXV2N3635 Applications
There are a lot of Microsemi Corporation JANTXV2N3635 applications of single BJT transistors.