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JANTXV2N3739

JANTXV2N3739

JANTXV2N3739

Microsemi Corporation

JANTXV2N3739 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Microsemi Corporation stock available on our website

SOT-23

JANTXV2N3739 Datasheet

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Specifications
Name Value
Type Parameter
Factory Lead Time 20 Weeks
Lifecycle Status IN PRODUCTION (Last Updated: 3 weeks ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-213AA, TO-66-2
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~200°C TJ
Packaging Bulk
Published 2002
Series Military, MIL-PRF-19500/402
JESD-609 Code e0
Pbfree Code no
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Tin/Lead (Sn/Pb)
Max Power Dissipation 20W
Terminal Position BOTTOM
Terminal Form PIN/PEG
Pin Count 3
JESD-30 Code O-MBFM-P2
Qualification Status Qualified
Number of Elements 1
Configuration SINGLE
Power Dissipation 20W
Case Connection COLLECTOR
Transistor Application SWITCHING
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 300V
Max Collector Current 1A
DC Current Gain (hFE) (Min) @ Ic, Vce 25 @ 250mA 10V
Current - Collector Cutoff (Max) 100μA ICBO
Vce Saturation (Max) @ Ib, Ic 2.5V @ 25mA, 250mA
Transition Frequency 10MHz
Collector Base Voltage (VCBO) 325V
Emitter Base Voltage (VEBO) 6V
Radiation Hardening No
RoHS Status Non-RoHS Compliant
JANTXV2N3739 Product Details

JANTXV2N3739 Overview


As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 25 @ 250mA 10V.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 2.5V @ 25mA, 250mA.If the emitter base voltage is kept at 6V, a high level of efficiency can be achieved.In the part, the transition frequency is 10MHz.During maximum operation, collector current can be as low as 1A volts.

JANTXV2N3739 Features


the DC current gain for this device is 25 @ 250mA 10V
the vce saturation(Max) is 2.5V @ 25mA, 250mA
the emitter base voltage is kept at 6V
a transition frequency of 10MHz

JANTXV2N3739 Applications


There are a lot of Microsemi Corporation JANTXV2N3739 applications of single BJT transistors.

  • Interface
  • Driver
  • Muting
  • Inverter

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