JANTXV2N3867 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Microsemi Corporation stock available on our website
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JANTXV2N3867 Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
20 Weeks
Lifecycle Status
IN PRODUCTION (Last Updated: 1 month ago)
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-205AA, TO-5-3 Metal Can
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-65°C~200°C TJ
Packaging
Bulk
Published
2007
Series
Military, MIL-PRF-19500/350
JESD-609 Code
e0
Pbfree Code
no
Part Status
Discontinued
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin/Lead (Sn/Pb)
Max Power Dissipation
1W
Terminal Position
BOTTOM
Terminal Form
WIRE
Qualification Status
Qualified
Number of Elements
1
Configuration
SINGLE
Power Dissipation
1W
Case Connection
COLLECTOR
Transistor Application
SWITCHING
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
40V
Max Collector Current
3A
DC Current Gain (hFE) (Min) @ Ic, Vce
40 @ 1.5A 2V
Current - Collector Cutoff (Max)
100μA ICBO
Vce Saturation (Max) @ Ib, Ic
1.5V @ 250mA, 2.5A
Collector Base Voltage (VCBO)
40V
Emitter Base Voltage (VEBO)
4V
Turn Off Time-Max (toff)
600ns
Radiation Hardening
No
RoHS Status
Non-RoHS Compliant
JANTXV2N3867 Product Details
JANTXV2N3867 Overview
In this device, the DC current gain is 40 @ 1.5A 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 1.5V @ 250mA, 2.5A.An emitter's base voltage can be kept at 4V to gain high efficiency.The maximum collector current is 3A volts.
JANTXV2N3867 Features
the DC current gain for this device is 40 @ 1.5A 2V the vce saturation(Max) is 1.5V @ 250mA, 2.5A the emitter base voltage is kept at 4V
JANTXV2N3867 Applications
There are a lot of Microsemi Corporation JANTXV2N3867 applications of single BJT transistors.