Welcome to Hotenda.com Online Store!

logo
userjoin
Home

JANTXV2N6351

  • JANTXV2N6351
  • JANTXV2N6351

JANTXV2N6351

JANTXV2N6351

Microsemi Corporation

JANTXV2N6351 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Microsemi Corporation stock available on our website

SOT-23

JANTXV2N6351 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 20 Weeks
Lifecycle Status IN PRODUCTION (Last Updated: 1 month ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-205AC, TO-33-4 Metal Can
Number of Pins 4
Transistor Element Material SILICON
Operating Temperature -65°C~200°C TJ
Packaging Bulk
Published 2007
Series Military, MIL-PRF-19500/472
JESD-609 Code e0
Pbfree Code no
Part Status Discontinued
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
Terminal Finish Tin/Lead (Sn/Pb)
Terminal Position BOTTOM
Terminal Form WIRE
Pin Count 4
Qualification Status Qualified
Number of Elements 1
Polarity NPN
Element Configuration Single
Case Connection COLLECTOR
Power - Max 1W
Transistor Type NPN - Darlington
Collector Emitter Voltage (VCEO) 150V
DC Current Gain (hFE) (Min) @ Ic, Vce 1000 @ 5A 5V
Vce Saturation (Max) @ Ib, Ic 2.5V @ 10mA, 5A
Current - Collector (Ic) (Max) 5A
Collector Emitter Saturation Voltage 2.5V
Collector Base Voltage (VCBO) 150V
Emitter Base Voltage (VEBO) 12V
Turn On Time-Max (ton) 500ns
Radiation Hardening No
RoHS Status Non-RoHS Compliant
JANTXV2N6351 Product Details

JANTXV2N6351 Overview


The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 1000 @ 5A 5V.A collector emitter saturation voltage of 2.5V allows maximum design flexibility.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 2.5V @ 10mA, 5A.Emitter base voltages of 12V can achieve high levels of efficiency.

JANTXV2N6351 Features


the DC current gain for this device is 1000 @ 5A 5V
a collector emitter saturation voltage of 2.5V
the vce saturation(Max) is 2.5V @ 10mA, 5A
the emitter base voltage is kept at 12V

JANTXV2N6351 Applications


There are a lot of Microsemi Corporation JANTXV2N6351 applications of single BJT transistors.

  • Interface
  • Inverter
  • Driver
  • Muting

Related Part Number

JANTXV2N3867
Microsemi Corporation
JANTXV2N3867
$0 $/piece
MMBT2222AHLT1H
ON Semiconductor
MMBT2222AHLT1H
$0 $/piece
CTLT3410-M621 BK
Central Semiconductor Corp
CTLT3410-M621 BK
$0 $/piece
2N5209
Central Semiconductor
2N5209
$0 $/piece
PP9063
Microsemi Corporation
PP9063
$0 $/piece
CP710-CMPTA96-CT
Central Semiconductor Corp
CP710-CMPTA96-CT
$0 $/piece
JANTX2N708
Microsemi Corporation
JANTX2N708
$0 $/piece
JANTX2N6546
Microsemi Corporation
JANTX2N6546
$0 $/piece
JANTX2N6250T1
Microsemi Corporation
JANTX2N6250T1
$0 $/piece
BC807-25T116
ROHM Semiconductor
BC807-25T116
$0 $/piece
view all related

Get Subscriber

Enter Your Email Address, Get the Latest News