2N5209 Overview
As it features a collector emitter saturation voltage of 700mV, it allows for maximum design flexibility.Keeping the emitter base voltage at 4.5V can result in a high level of efficiency.There is a transition frequency of 30MHz in the part.When collector current reaches its maximum, it can reach 50mA volts.
2N5209 Features
a collector emitter saturation voltage of 700mV
the emitter base voltage is kept at 4.5V
a transition frequency of 30MHz
2N5209 Applications
There are a lot of Central Semiconductor
2N5209 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
