BC807-25T116 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 160 @ 100mA 1V.This design offers maximum flexibility with a collector emitter saturation voltage of -700mV.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 700mV @ 50mA, 500mA.A -800mA continuous collector voltage is necessary to achieve high efficiency.Keeping the emitter base voltage at -5V allows for a high level of efficiency.As a result, the part has a transition frequency of 150MHz.Collector current can be as low as 500mA volts at its maximum.
BC807-25T116 Features
the DC current gain for this device is 160 @ 100mA 1V
a collector emitter saturation voltage of -700mV
the vce saturation(Max) is 700mV @ 50mA, 500mA
the emitter base voltage is kept at -5V
a transition frequency of 150MHz
BC807-25T116 Applications
There are a lot of ROHM Semiconductor BC807-25T116 applications of single BJT transistors.
- Driver
- Interface
- Inverter
- Muting
