JANTXV2N5339 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Microsemi Corporation stock available on our website
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JANTXV2N5339 Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
20 Weeks
Lifecycle Status
IN PRODUCTION (Last Updated: 1 month ago)
Mount
Through Hole
Mounting Type
Surface Mount
Package / Case
TO-205AD, TO-39-3 Metal Can
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-65°C~200°C TJ
Packaging
Bulk
Published
2007
Series
Military, MIL-PRF-19500/560
JESD-609 Code
e0
Pbfree Code
no
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin/Lead (Sn/Pb)
HTS Code
8541.29.00.95
Max Power Dissipation
1W
Terminal Position
BOTTOM
Terminal Form
WIRE
Pin Count
2
Reference Standard
MIL-19500/560
Qualification Status
Qualified
Number of Elements
1
Configuration
SINGLE
Case Connection
COLLECTOR
Power - Max
1W
Transistor Application
SWITCHING
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
100V
Max Collector Current
5A
DC Current Gain (hFE) (Min) @ Ic, Vce
60 @ 2A 2V
Current - Collector Cutoff (Max)
100μA
Vce Saturation (Max) @ Ib, Ic
1.2V @ 500mA, 5A
Collector Base Voltage (VCBO)
100V
Turn Off Time-Max (toff)
2200ns
Turn On Time-Max (ton)
200ns
Radiation Hardening
No
RoHS Status
Non-RoHS Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
112
$15.94009
$1785.29008
JANTXV2N5339 Product Details
JANTXV2N5339 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 60 @ 2A 2V.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.A maximum collector current of 5A volts can be achieved.
JANTXV2N5339 Features
the DC current gain for this device is 60 @ 2A 2V the vce saturation(Max) is 1.2V @ 500mA, 5A
JANTXV2N5339 Applications
There are a lot of Microsemi Corporation JANTXV2N5339 applications of single BJT transistors.