JANTXV2N5666S datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Microsemi Corporation stock available on our website
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JANTXV2N5666S Datasheet
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In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
20 Weeks
Lifecycle Status
IN PRODUCTION (Last Updated: 1 month ago)
Contact Plating
Lead, Tin
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-205AD, TO-39-3 Metal Can
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-65°C~200°C TJ
Packaging
Bulk
Published
2007
Series
Military, MIL-PRF-19500/455
JESD-609 Code
e0
Pbfree Code
no
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
ECCN Code
EAR99
Terminal Finish
Tin/Lead (Sn/Pb)
Subcategory
Other Transistors
Max Power Dissipation
1.2W
Terminal Position
BOTTOM
Terminal Form
PIN/PEG
Peak Reflow Temperature (Cel)
NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Pin Count
2
JESD-30 Code
O-MBFM-P2
Qualification Status
Qualified
Number of Elements
1
Configuration
SINGLE
Power Dissipation
1.2W
Case Connection
COLLECTOR
Transistor Application
SWITCHING
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
200V
Max Collector Current
5A
DC Current Gain (hFE) (Min) @ Ic, Vce
40 @ 1A 5V
Current - Collector Cutoff (Max)
200nA
JEDEC-95 Code
TO-5
Vce Saturation (Max) @ Ib, Ic
1V @ 5A, 1A
Collector Base Voltage (VCBO)
250V
Emitter Base Voltage (VEBO)
6V
RoHS Status
Non-RoHS Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
100
$21.31820
$2131.82
JANTXV2N5666S Product Details
JANTXV2N5666S Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 40 @ 1A 5V.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 1V @ 5A, 1A.An emitter's base voltage can be kept at 6V to gain high efficiency.When collector current reaches its maximum, it can reach 5A volts.
JANTXV2N5666S Features
the DC current gain for this device is 40 @ 1A 5V the vce saturation(Max) is 1V @ 5A, 1A the emitter base voltage is kept at 6V
JANTXV2N5666S Applications
There are a lot of Microsemi Corporation JANTXV2N5666S applications of single BJT transistors.