Welcome to Hotenda.com Online Store!

logo
userjoin
Home

JANTXV2N5666S

JANTXV2N5666S

JANTXV2N5666S

Microsemi Corporation

JANTXV2N5666S datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Microsemi Corporation stock available on our website

SOT-23

JANTXV2N5666S Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 20 Weeks
Lifecycle Status IN PRODUCTION (Last Updated: 1 month ago)
Contact Plating Lead, Tin
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-205AD, TO-39-3 Metal Can
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -65°C~200°C TJ
Packaging Bulk
Published 2007
Series Military, MIL-PRF-19500/455
JESD-609 Code e0
Pbfree Code no
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Tin/Lead (Sn/Pb)
Subcategory Other Transistors
Max Power Dissipation 1.2W
Terminal Position BOTTOM
Terminal Form PIN/PEG
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 2
JESD-30 Code O-MBFM-P2
Qualification Status Qualified
Number of Elements 1
Configuration SINGLE
Power Dissipation 1.2W
Case Connection COLLECTOR
Transistor Application SWITCHING
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 200V
Max Collector Current 5A
DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 1A 5V
Current - Collector Cutoff (Max) 200nA
JEDEC-95 Code TO-5
Vce Saturation (Max) @ Ib, Ic 1V @ 5A, 1A
Collector Base Voltage (VCBO) 250V
Emitter Base Voltage (VEBO) 6V
RoHS Status Non-RoHS Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
100 $21.31820 $2131.82
JANTXV2N5666S Product Details

JANTXV2N5666S Overview


As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 40 @ 1A 5V.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 1V @ 5A, 1A.An emitter's base voltage can be kept at 6V to gain high efficiency.When collector current reaches its maximum, it can reach 5A volts.

JANTXV2N5666S Features


the DC current gain for this device is 40 @ 1A 5V
the vce saturation(Max) is 1V @ 5A, 1A
the emitter base voltage is kept at 6V

JANTXV2N5666S Applications


There are a lot of Microsemi Corporation JANTXV2N5666S applications of single BJT transistors.

  • Interface
  • Inverter
  • Driver
  • Muting

Related Part Number

Get Subscriber

Enter Your Email Address, Get the Latest News