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JANTXV2N5667S

JANTXV2N5667S

JANTXV2N5667S

Microsemi Corporation

Bipolar Transistors - BJT Power BJT

SOT-23

JANTXV2N5667S Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 20 Weeks
Lifecycle Status IN PRODUCTION (Last Updated: 1 month ago)
Contact Plating Lead, Tin
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-205AD, TO-39-3 Metal Can
Transistor Element Material SILICON
Operating Temperature -65°C~200°C TJ
Packaging Bulk
Published 2007
Series Military, MIL-PRF-19500/455
JESD-609 Code e0
Pbfree Code no
Part Status Discontinued
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Tin/Lead (Sn/Pb)
HTS Code 8541.29.00.95
Subcategory Other Transistors
Max Power Dissipation 1.2W
Terminal Position BOTTOM
Terminal Form PIN/PEG
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 2
Reference Standard MIL-19500/455E
JESD-30 Code O-MBFM-P2
Qualification Status Qualified
Number of Elements 1
Configuration SINGLE
Case Connection COLLECTOR
Transistor Application SWITCHING
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 300V
Max Collector Current 5A
DC Current Gain (hFE) (Min) @ Ic, Vce 25 @ 1A 5V
Current - Collector Cutoff (Max) 200nA
JEDEC-95 Code TO-5
Vce Saturation (Max) @ Ib, Ic 1V @ 1A, 5A
Current - Collector (Ic) (Max) 5A
Collector Base Voltage (VCBO) 400V
RoHS Status Non-RoHS Compliant

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