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JANTXV2N6764T1

JANTXV2N6764T1

JANTXV2N6764T1

Microsemi Corporation

MOSFET N-CH 100V 38A

SOT-23

JANTXV2N6764T1 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-254-3, TO-254AA (Straight Leads)
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Bulk
Published 1997
Series Military, MIL-PRF-19500/543
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Subcategory FET General Purpose Powers
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Terminal Form PIN/PEG
Pin Count 3
Reference Standard MIL-19500/543
JESD-30 Code S-XSFM-P3
Qualification Status Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 4W Ta 150W Tc
Operating Mode ENHANCEMENT MODE
Case Connection ISOLATED
FET Type N-Channel
Rds On (Max) @ Id, Vgs 65m Ω @ 38A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Current - Continuous Drain (Id) @ 25°C 38A Tc
Gate Charge (Qg) (Max) @ Vgs 125nC @ 10V
Drain to Source Voltage (Vdss) 100V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Continuous Drain Current (ID) 38A
Drain-source On Resistance-Max 0.065Ohm
DS Breakdown Voltage-Min 100V
RoHS Status Non-RoHS Compliant

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