JANTXV2N6784

new-10%

Manufacturer part number:JANTXV2N6784

Manufacturer:Microsemi Corporation

Description:MOSFET N-CH

Case Package:SOT-23

Datasheet:JANTXV2N6784 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-205AF Metal Can
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Bulk
Published	1997
Series	Military, MIL-PRF-19500/556
JESD-609 Code	e0
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Tin/Lead (Sn/Pb)
Additional Feature	RADIATION HARDENED
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	BOTTOM
Terminal Form	WIRE
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Reach Compliance Code	unknown
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Reference Standard	MILITARY STANDARD (USA)
JESD-30 Code	O-MBCY-W3
Qualification Status	Qualified
Number of Elements	1
Configuration	SINGLE
Power Dissipation-Max	800mW Ta 15W Tc
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	1.6 Ω @ 2.25A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Current - Continuous Drain (Id) @ 25°C	2.25A Tc
Gate Charge (Qg) (Max) @ Vgs	8.6nC @ 10V
Drain to Source Voltage (Vdss)	200V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Continuous Drain Current (ID)	2.25A
JEDEC-95 Code	TO-39
Drain-source On Resistance-Max	1.5Ohm
Pulsed Drain Current-Max (IDM)	9A
DS Breakdown Voltage-Min	200V
RoHS Status	Non-RoHS Compliant