JANTXV2N6796U

new-10%

Manufacturer part number:JANTXV2N6796U

Manufacturer:Microsemi Corporation

Description:MOSFET N-CH 100V 8A

Case Package:SOT-23

Datasheet:JANTXV2N6796U Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Contact Plating	Lead, Tin
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	18-CLCC
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Bulk
Published	1997
Series	Military, MIL-PRF-19500/557
JESD-609 Code	e0
Pbfree Code	no
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	15
ECCN Code	EAR99
Terminal Finish	Tin/Lead (Sn/Pb)
Additional Feature	HIGH RELIABILITY
Technology	MOSFET (Metal Oxide)
Terminal Position	QUAD
Terminal Form	NO LEAD
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	16
Reference Standard	MIL-19500/557
JESD-30 Code	R-CQCC-N15
Qualification Status	Qualified
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	800mW Ta 25W Tc
Operating Mode	ENHANCEMENT MODE
Case Connection	SOURCE
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	195m Ω @ 8A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Current - Continuous Drain (Id) @ 25°C	8A Tc
Gate Charge (Qg) (Max) @ Vgs	28.51nC @ 10V
Drain to Source Voltage (Vdss)	100V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Continuous Drain Current (ID)	8A
Gate to Source Voltage (Vgs)	20V
Drain Current-Max (Abs) (ID)	8A
Drain-source On Resistance-Max	0.195Ohm
Pulsed Drain Current-Max (IDM)	32A
DS Breakdown Voltage-Min	100V
Avalanche Energy Rating (Eas)	134 mJ
RoHS Status	Non-RoHS Compliant