IPB45P03P4L11ATMA1

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IPB45P03P4L11ATMA1

Manufacturer part number:IPB45P03P4L11ATMA1

Manufacturer:Infineon Technologies

Description:Trans MOSFET P-CH 30V 45A 3-Pin(2+Tab) TO-263

Case Package:SOT-23

Datasheet:IPB45P03P4L11ATMA1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	14 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tape & Reel (TR)
Published	2008
Series	Automotive, AEC-Q101, OptiMOS™
JESD-609 Code	e3
Part Status	Not For New Designs
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Additional Feature	LOGIC LEVEL COMPATIBLE
Technology	MOSFET (Metal Oxide)
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Power Dissipation-Max	58W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	58W
Case Connection	DRAIN
Turn On Delay Time	7 ns
FET Type	P-Channel
Rds On (Max) @ Id, Vgs	10.8m Ω @ 45A, 10V
Vgs(th) (Max) @ Id	2V @ 85μA
Halogen Free	Halogen Free
Input Capacitance (Ciss) (Max) @ Vds	3770pF @ 25V
Current - Continuous Drain (Id) @ 25°C	45A Tc
Gate Charge (Qg) (Max) @ Vgs	55nC @ 10V
Rise Time	3ns
Drain to Source Voltage (Vdss)	30V
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	+5V, -16V
Fall Time (Typ)	14 ns
Turn-Off Delay Time	45 ns
Continuous Drain Current (ID)	-45A
Gate to Source Voltage (Vgs)	5V
Max Dual Supply Voltage	-30V
Drain-source On Resistance-Max	0.0111Ohm
Drain to Source Breakdown Voltage	-30V
Pulsed Drain Current-Max (IDM)	180A
Avalanche Energy Rating (Eas)	110 mJ
Height	4.4mm
Length	10mm
Width	9.25mm
RoHS Status	ROHS3 Compliant
Lead Free	Contains Lead