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CSD16327Q3

CSD16327Q3

CSD16327Q3

Texas Instruments

CSD16327Q3 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Texas Instruments stock available on our website

SOT-23

CSD16327Q3 Datasheet

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In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 12 Weeks
Lifecycle Status ACTIVE (Last Updated: 3 days ago)
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Number of Pins 8
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series NexFET™
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Additional Feature AVALANCHE RATED
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form NO LEAD
Peak Reflow Temperature (Cel) 260
Reach Compliance Code not_compliant
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number CSD16327
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 3W Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 2.8W
Case Connection DRAIN
Turn On Delay Time 5.3 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 4m Ω @ 24A, 8V
Vgs(th) (Max) @ Id 1.4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1300pF @ 12.5V
Current - Continuous Drain (Id) @ 25°C 60A Tc
Gate Charge (Qg) (Max) @ Vgs 8.4nC @ 4.5V
Rise Time 15ns
Drive Voltage (Max Rds On,Min Rds On) 3V 8V
Vgs (Max) +10V, -8V
Fall Time (Typ) 6.3 ns
Turn-Off Delay Time 13 ns
Continuous Drain Current (ID) 22A
Threshold Voltage 1.2V
Gate to Source Voltage (Vgs) 10V
Drain Current-Max (Abs) (ID) 60A
Drain-source On Resistance-Max 0.0065Ohm
Drain to Source Breakdown Voltage 25V
Max Junction Temperature (Tj) 150°C
Feedback Cap-Max (Crss) 65 pF
Height 1.1mm
Length 3.3mm
Width 3.3mm
Thickness 1mm
REACH SVHC Unknown
RoHS Status ROHS3 Compliant
Lead Free Contains Lead
Pricing & Ordering
Quantity Unit Price Ext. Price
2,500 $0.44660 $0.8932
CSD16327Q3 Product Details

CSD16327Q3 Description


CSD16327Q3 is a type of N-channel NexFET? power MOSFET developed based on the established NexFET? technology. It is specially designed to minimize losses in power conversion and optimized for 5V gate drive applications. It is available in the SON package for space-saving. CSD16327Q3 is optimized for control or synchronous FET applications



CSD16327Q3 Features


  • NexFET? technology

  • Optimized for 5-V gate drive

  • Ultralow Qg and Qgd

  • Low thermal resistance

  • Available in the SON package



CSD16327Q3 Applications


  • Point-of-load synchronous buck converter for applications in networking, telecom, and computing systems

  • Optimized for control or synchronous FET applications


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