2PD601ART,215 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Nexperia USA Inc. stock available on our website
SOT-23
2PD601ART,215 Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
4 Weeks
Contact Plating
Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Published
2005
Series
Automotive, AEC-Q101
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Max Power Dissipation
250mW
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Frequency
100MHz
[email protected] Reflow Temperature-Max (s)
40
Base Part Number
2PD601A
Pin Count
3
Number of Elements
1
Element Configuration
Single
Power Dissipation
250mW
Transistor Application
SWITCHING
Gain Bandwidth Product
100MHz
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
50V
Max Collector Current
100mA
DC Current Gain (hFE) (Min) @ Ic, Vce
210 @ 2mA 10V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
250mV @ 10mA, 100mA
Collector Emitter Breakdown Voltage
50V
Transition Frequency
100MHz
Collector Emitter Saturation Voltage
250mV
Max Breakdown Voltage
50V
Collector Base Voltage (VCBO)
60V
Emitter Base Voltage (VEBO)
6V
hFE Min
90
Height
1mm
Length
3mm
Width
1.4mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
3,000
$0.03080
$0.0924
6,000
$0.02805
$0.1683
15,000
$0.02475
$0.37125
30,000
$0.02255
$0.6765
75,000
$0.02035
$1.52625
150,000
$0.01815
$2.7225
2PD601ART,215 Product Details
2PD601ART,215 Overview
This device has a DC current gain of 210 @ 2mA 10V, which is the ratio between the collector current and the base current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 250mV.A VCE saturation (Max) of 250mV @ 10mA, 100mA means Ic has reached its maximum value(saturated).Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 6V.In the part, the transition frequency is 100MHz.A breakdown input voltage of 50V volts can be used.A maximum collector current of 100mA volts can be achieved.
2PD601ART,215 Features
the DC current gain for this device is 210 @ 2mA 10V a collector emitter saturation voltage of 250mV the vce saturation(Max) is 250mV @ 10mA, 100mA the emitter base voltage is kept at 6V a transition frequency of 100MHz
2PD601ART,215 Applications
There are a lot of Nexperia USA Inc. 2PD601ART,215 applications of single BJT transistors.