BC817K-25R datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Nexperia USA Inc. stock available on our website
SOT-23
BC817K-25R Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
4 Weeks
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Part Status
Active
Power - Max
250mW
Transistor Type
NPN
DC Current Gain (hFE) (Min) @ Ic, Vce
160 @ 100mA 1V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
700mV @ 50mA, 500mA
Voltage - Collector Emitter Breakdown (Max)
45V
Current - Collector (Ic) (Max)
500mA
Frequency - Transition
100MHz
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.223616
$0.223616
10
$0.210958
$2.10958
100
$0.199017
$19.9017
500
$0.187752
$93.876
1000
$0.177125
$177.125
BC817K-25R Product Details
BC817K-25R Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 160 @ 100mA 1V.A VCE saturation (Max) of 700mV @ 50mA, 500mA means Ic has reached its maximum value(saturated).There is a 45V maximal voltage in the device due to collector-emitter breakdown.
BC817K-25R Features
the DC current gain for this device is 160 @ 100mA 1V the vce saturation(Max) is 700mV @ 50mA, 500mA
BC817K-25R Applications
There are a lot of Nexperia USA Inc. BC817K-25R applications of single BJT transistors.