BC869,135 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Nexperia USA Inc. stock available on our website
SOT-23
BC869,135 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
4 Weeks
Contact Plating
Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-243AA
Number of Pins
4
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Published
2011
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Max Power Dissipation
1.2W
Terminal Form
FLAT
Frequency
140MHz
Base Part Number
BC869
Pin Count
3
JESD-30 Code
R-PSSO-F3
Number of Elements
1
Element Configuration
Single
Power Dissipation
1.35W
Case Connection
COLLECTOR
Power - Max
1.2W
Transistor Application
SWITCHING
Gain Bandwidth Product
140MHz
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
20V
Max Collector Current
1A
DC Current Gain (hFE) (Min) @ Ic, Vce
85 @ 500mA 1V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
500mV @ 100mA, 1A
Collector Emitter Breakdown Voltage
20V
Transition Frequency
140MHz
Collector Base Voltage (VCBO)
32V
Emitter Base Voltage (VEBO)
5V
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$4.088800
$4.0888
10
$3.857358
$38.57358
100
$3.639017
$363.9017
500
$3.433035
$1716.5175
1000
$3.238713
$3238.713
BC869,135 Product Details
BC869,135 Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 85 @ 500mA 1V.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.In the part, the transition frequency is 140MHz.In extreme cases, the collector current can be as low as 1A volts.
BC869,135 Features
the DC current gain for this device is 85 @ 500mA 1V the vce saturation(Max) is 500mV @ 100mA, 1A the emitter base voltage is kept at 5V a transition frequency of 140MHz
BC869,135 Applications
There are a lot of Nexperia USA Inc. BC869,135 applications of single BJT transistors.