2SB1316TL Overview
This device has a DC current gain of 1000 @ 1A 2V, which is the ratio between the collector current and the base current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 1.5V.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1.5V @ 1mA, 1A.A -2A continuous collector voltage is necessary to achieve high efficiency.The base voltage of the emitter can be kept at 8V to achieve high efficiency.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is -2A.50MHz is present in the transition frequency.The breakdown input voltage is 100V volts.When collector current reaches its maximum, it can reach 2A volts.
2SB1316TL Features
the DC current gain for this device is 1000 @ 1A 2V
a collector emitter saturation voltage of 1.5V
the vce saturation(Max) is 1.5V @ 1mA, 1A
the emitter base voltage is kept at 8V
the current rating of this device is -2A
a transition frequency of 50MHz
2SB1316TL Applications
There are a lot of ROHM Semiconductor 2SB1316TL applications of single BJT transistors.
- Inverter
- Driver
- Muting
- Interface
