BC33725TA Overview

In this device, the DC current gain is 160 @ 100mA 1V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.With a collector emitter saturation voltage of 700mV, it offers maximum design flexibility.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 700mV @ 50mA, 500mA.A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.Input voltage breakdown is available at 45V volts.Collector current can be as low as 800mA volts at its maximum.

BC33725TA Features

the DC current gain for this device is 160 @ 100mA 1V
a collector emitter saturation voltage of 700mV
the vce saturation(Max) is 700mV @ 50mA, 500mA
the emitter base voltage is kept at 5V

BC33725TA Applications

There are a lot of ON Semiconductor BC33725TA applications of single BJT transistors.

• Inverter
• Muting
• Interface
• Driver