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BCP56-10TF

BCP56-10TF

BCP56-10TF

Nexperia USA Inc.

BCP56-10TF datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Nexperia USA Inc. stock available on our website

SOT-23

BCP56-10TF Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 4 Weeks
Mounting Type Surface Mount
Package / Case TO-261-4, TO-261AA
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2014
Series Automotive, AEC-Q101
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Pin Count 4
Power - Max 1.8W
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 63 @ 150mA 2V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 500mV @ 50mA, 500mA
Voltage - Collector Emitter Breakdown (Max) 80V
Current - Collector (Ic) (Max) 1A
Frequency - Transition 100MHz
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.331450 $0.33145
10 $0.312689 $3.12689
100 $0.294989 $29.4989
500 $0.278292 $139.146
1000 $0.262539 $262.539
BCP56-10TF Product Details

BCP56-10TF Overview


This device has a DC current gain of 63 @ 150mA 2V, which is the ratio between the collector current and the base current.A VCE saturation (Max) of 500mV @ 50mA, 500mA means Ic has reached its maximum value(saturated).There is a 80V maximal voltage in the device due to collector-emitter breakdown.

BCP56-10TF Features


the DC current gain for this device is 63 @ 150mA 2V
the vce saturation(Max) is 500mV @ 50mA, 500mA

BCP56-10TF Applications


There are a lot of Nexperia USA Inc. BCP56-10TF applications of single BJT transistors.

  • Driver
  • Muting
  • Interface
  • Inverter

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