BCP56-10TF datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Nexperia USA Inc. stock available on our website
SOT-23
BCP56-10TF Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
4 Weeks
Mounting Type
Surface Mount
Package / Case
TO-261-4, TO-261AA
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Published
2014
Series
Automotive, AEC-Q101
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Pin Count
4
Power - Max
1.8W
Transistor Type
NPN
DC Current Gain (hFE) (Min) @ Ic, Vce
63 @ 150mA 2V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
500mV @ 50mA, 500mA
Voltage - Collector Emitter Breakdown (Max)
80V
Current - Collector (Ic) (Max)
1A
Frequency - Transition
100MHz
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.331450
$0.33145
10
$0.312689
$3.12689
100
$0.294989
$29.4989
500
$0.278292
$139.146
1000
$0.262539
$262.539
BCP56-10TF Product Details
BCP56-10TF Overview
This device has a DC current gain of 63 @ 150mA 2V, which is the ratio between the collector current and the base current.A VCE saturation (Max) of 500mV @ 50mA, 500mA means Ic has reached its maximum value(saturated).There is a 80V maximal voltage in the device due to collector-emitter breakdown.
BCP56-10TF Features
the DC current gain for this device is 63 @ 150mA 2V the vce saturation(Max) is 500mV @ 50mA, 500mA
BCP56-10TF Applications
There are a lot of Nexperia USA Inc. BCP56-10TF applications of single BJT transistors.