BCV49,135 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Nexperia USA Inc. stock available on our website
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BCV49,135 Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
4 Weeks
Contact Plating
Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-243AA
Number of Pins
4
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Published
2001
Series
Automotive, AEC-Q101
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Max Power Dissipation
1.3W
Terminal Form
FLAT
Base Part Number
BCV49
Pin Count
3
JESD-30 Code
R-PSSO-F3
Number of Elements
1
Polarity
NPN
Element Configuration
Single
Case Connection
COLLECTOR
Power - Max
1.3W
Transistor Application
AMPLIFIER
Transistor Type
NPN - Darlington
Collector Emitter Voltage (VCEO)
60V
Max Collector Current
500mA
DC Current Gain (hFE) (Min) @ Ic, Vce
10000 @ 100mA 5V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
1V @ 100μA, 100mA
Collector Emitter Breakdown Voltage
60V
Transition Frequency
220MHz
Collector Emitter Saturation Voltage
1V
Max Breakdown Voltage
60V
Frequency - Transition
220MHz
Collector Base Voltage (VCBO)
80V
Emitter Base Voltage (VEBO)
10V
VCEsat-Max
1 V
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.117118
$0.117118
10
$0.110489
$1.10489
100
$0.104235
$10.4235
500
$0.098334
$49.167
1000
$0.092769
$92.769
BCV49,135 Product Details
BCV49,135 Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 10000 @ 100mA 5V DC current gain.The collector emitter saturation voltage is 1V, which allows for maximum design flexibility.A VCE saturation (Max) of 1V @ 100μA, 100mA means Ic has reached its maximum value(saturated).With the emitter base voltage set at 10V, an efficient operation can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 220MHz.Single BJT transistor can be broken down at a voltage of 60V volts.Maximum collector currents can be below 500mA volts.
BCV49,135 Features
the DC current gain for this device is 10000 @ 100mA 5V a collector emitter saturation voltage of 1V the vce saturation(Max) is 1V @ 100μA, 100mA the emitter base voltage is kept at 10V a transition frequency of 220MHz
BCV49,135 Applications
There are a lot of Nexperia USA Inc. BCV49,135 applications of single BJT transistors.