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BCV49,135

BCV49,135

BCV49,135

Nexperia USA Inc.

BCV49,135 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Nexperia USA Inc. stock available on our website

SOT-23

BCV49,135 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 4 Weeks
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-243AA
Number of Pins 4
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2001
Series Automotive, AEC-Q101
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Max Power Dissipation 1.3W
Terminal Form FLAT
Base Part Number BCV49
Pin Count 3
JESD-30 Code R-PSSO-F3
Number of Elements 1
Polarity NPN
Element Configuration Single
Case Connection COLLECTOR
Power - Max 1.3W
Transistor Application AMPLIFIER
Transistor Type NPN - Darlington
Collector Emitter Voltage (VCEO) 60V
Max Collector Current 500mA
DC Current Gain (hFE) (Min) @ Ic, Vce 10000 @ 100mA 5V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 1V @ 100μA, 100mA
Collector Emitter Breakdown Voltage 60V
Transition Frequency 220MHz
Collector Emitter Saturation Voltage 1V
Max Breakdown Voltage 60V
Frequency - Transition 220MHz
Collector Base Voltage (VCBO) 80V
Emitter Base Voltage (VEBO) 10V
VCEsat-Max 1 V
Radiation Hardening No
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.117118 $0.117118
10 $0.110489 $1.10489
100 $0.104235 $10.4235
500 $0.098334 $49.167
1000 $0.092769 $92.769
BCV49,135 Product Details

BCV49,135 Overview


DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 10000 @ 100mA 5V DC current gain.The collector emitter saturation voltage is 1V, which allows for maximum design flexibility.A VCE saturation (Max) of 1V @ 100μA, 100mA means Ic has reached its maximum value(saturated).With the emitter base voltage set at 10V, an efficient operation can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 220MHz.Single BJT transistor can be broken down at a voltage of 60V volts.Maximum collector currents can be below 500mA volts.

BCV49,135 Features


the DC current gain for this device is 10000 @ 100mA 5V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 100μA, 100mA
the emitter base voltage is kept at 10V
a transition frequency of 220MHz

BCV49,135 Applications


There are a lot of Nexperia USA Inc. BCV49,135 applications of single BJT transistors.

  • Muting
  • Inverter
  • Interface
  • Driver

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