SMMBTA64LT1G Overview
In this device, the DC current gain is 20000 @ 100mA 5V, which is the ratio between the base current and the collector current.A collector emitter saturation voltage of 1.5V ensures maximum design flexibility.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1.5V @ 100μA, 100mA.The base voltage of the emitter can be kept at 10V to achieve high efficiency.The part has a transition frequency of 125MHz.Maximum collector currents can be below 500mA volts.
SMMBTA64LT1G Features
the DC current gain for this device is 20000 @ 100mA 5V
a collector emitter saturation voltage of 1.5V
the vce saturation(Max) is 1.5V @ 100μA, 100mA
the emitter base voltage is kept at 10V
a transition frequency of 125MHz
SMMBTA64LT1G Applications
There are a lot of ON Semiconductor SMMBTA64LT1G applications of single BJT transistors.
- Inverter
- Interface
- Muting
- Driver
