2SAR544P5T100 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ROHM Semiconductor stock available on our website
SOT-23
2SAR544P5T100 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
13 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-243AA
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN Code
EAR99
Max Power Dissipation
500mW
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Reach Compliance Code
not_compliant
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Power - Max
500mW
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
400mV
Max Collector Current
2.5A
DC Current Gain (hFE) (Min) @ Ic, Vce
120 @ 100mA 3V
Current - Collector Cutoff (Max)
1μA ICBO
Vce Saturation (Max) @ Ib, Ic
400mV @ 50mA, 1A
Collector Emitter Breakdown Voltage
80V
Max Breakdown Voltage
80V
Frequency - Transition
280MHz
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.208687
$0.208687
10
$0.196875
$1.96875
100
$0.185731
$18.5731
500
$0.175218
$87.609
1000
$0.165300
$165.3
2SAR544P5T100 Product Details
2SAR544P5T100 Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 120 @ 100mA 3V.When VCE saturation is 400mV @ 50mA, 1A, transistor means Ic has reached transistors maximum value (saturated).As a result, it can handle voltages as low as 80V volts.Collector current can be as low as 2.5A volts at its maximum.
2SAR544P5T100 Features
the DC current gain for this device is 120 @ 100mA 3V the vce saturation(Max) is 400mV @ 50mA, 1A
2SAR544P5T100 Applications
There are a lot of ROHM Semiconductor 2SAR544P5T100 applications of single BJT transistors.