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2SAR544P5T100

2SAR544P5T100

2SAR544P5T100

ROHM Semiconductor

2SAR544P5T100 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ROHM Semiconductor stock available on our website

SOT-23

2SAR544P5T100 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 13 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-243AA
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Max Power Dissipation 500mW
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Power - Max 500mW
Transistor Type PNP
Collector Emitter Voltage (VCEO) 400mV
Max Collector Current 2.5A
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 100mA 3V
Current - Collector Cutoff (Max) 1μA ICBO
Vce Saturation (Max) @ Ib, Ic 400mV @ 50mA, 1A
Collector Emitter Breakdown Voltage 80V
Max Breakdown Voltage 80V
Frequency - Transition 280MHz
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.208687 $0.208687
10 $0.196875 $1.96875
100 $0.185731 $18.5731
500 $0.175218 $87.609
1000 $0.165300 $165.3
2SAR544P5T100 Product Details

2SAR544P5T100 Overview


The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 120 @ 100mA 3V.When VCE saturation is 400mV @ 50mA, 1A, transistor means Ic has reached transistors maximum value (saturated).As a result, it can handle voltages as low as 80V volts.Collector current can be as low as 2.5A volts at its maximum.

2SAR544P5T100 Features


the DC current gain for this device is 120 @ 100mA 3V
the vce saturation(Max) is 400mV @ 50mA, 1A

2SAR544P5T100 Applications


There are a lot of ROHM Semiconductor 2SAR544P5T100 applications of single BJT transistors.

  • Muting
  • Inverter
  • Interface
  • Driver

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