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BCW66FR

  • BCW66FR
  • BCW66FR

BCW66FR

BCW66FR

Nexperia USA Inc.

BCW66FR datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Nexperia USA Inc. stock available on our website

SOT-23

BCW66FR Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 4 Weeks
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2017
Series Automotive, AEC-Q101
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Pin Count 3
Power - Max 250mW
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 100mA 1V
Current - Collector Cutoff (Max) 5μA ICBO
Vce Saturation (Max) @ Ib, Ic 450mV @ 50mA, 500mA
Voltage - Collector Emitter Breakdown (Max) 45V
Current - Collector (Ic) (Max) 800mA
Frequency - Transition 100MHz
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.038080 $0.03808
500 $0.028000 $14
1000 $0.023333 $23.333
2000 $0.021407 $42.814
5000 $0.020006 $100.03
10000 $0.018611 $186.11
15000 $0.017999 $269.985
50000 $0.017698 $884.9
BCW66FR Product Details

BCW66FR Overview


DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 100 @ 100mA 1V DC current gain.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 450mV @ 50mA, 500mA.The device exhibits a collector-emitter breakdown at 45V.

BCW66FR Features


the DC current gain for this device is 100 @ 100mA 1V
the vce saturation(Max) is 450mV @ 50mA, 500mA

BCW66FR Applications


There are a lot of Nexperia USA Inc. BCW66FR applications of single BJT transistors.

  • Inverter
  • Interface
  • Driver
  • Muting

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