KSA1201OTF datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Rochester Electronics, LLC stock available on our website
SOT-23
KSA1201OTF Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mounting Type
Surface Mount
Package / Case
TO-243AA
Supplier Device Package
SOT-89-3
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Power - Max
1W
Transistor Type
PNP
DC Current Gain (hFE) (Min) @ Ic, Vce
80 @ 100mA 5V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
1V @ 50mA, 500mA
Voltage - Collector Emitter Breakdown (Max)
120V
Current - Collector (Ic) (Max)
800mA
Frequency - Transition
120MHz
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.12000
$0.12
500
$0.1188
$59.4
1000
$0.1176
$117.6
1500
$0.1164
$174.6
2000
$0.1152
$230.4
2500
$0.114
$285
KSA1201OTF Product Details
KSA1201OTF Overview
DC current gain in this device equals 80 @ 100mA 5V, which is the ratio of the base current to the collector current.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 1V @ 50mA, 500mA.The product comes in the supplier device package of SOT-89-3.This device displays a 120V maximum voltage - Collector Emitter Breakdown.
KSA1201OTF Features
the DC current gain for this device is 80 @ 100mA 5V the vce saturation(Max) is 1V @ 50mA, 500mA the supplier device package of SOT-89-3
KSA1201OTF Applications
There are a lot of Rochester Electronics, LLC KSA1201OTF applications of single BJT transistors.