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BSH111,215

BSH111,215

BSH111,215

Nexperia USA Inc.

NEXPERIA - BSH111,215 - MOSFET Transistor, N Channel, 335 mA, 55 V, 2.3 ohm, 4.5 V, 1 V

SOT-23

BSH111,215 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Surface Mount YES
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -65°C~150°C TJ
Packaging Tape & Reel (TR)
Published 1997
Series TrenchMOS™
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Additional Feature FAST SWITCHING
HTS Code 8541.29.00.75
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
[email protected] Reflow Temperature-Max (s) 30
Pin Count 3
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 830mW Tc
Operating Mode ENHANCEMENT MODE
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 4 Ω @ 500mA, 4.5V
Vgs(th) (Max) @ Id 1.3V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 40pF @ 10V
Current - Continuous Drain (Id) @ 25°C 335mA Ta
Gate Charge (Qg) (Max) @ Vgs 1nC @ 8V
Drain to Source Voltage (Vdss) 55V
Drive Voltage (Max Rds On,Min Rds On) 1.8V 4.5V
Vgs (Max) ±10V
Continuous Drain Current (ID) 335mA
Drain-source On Resistance-Max 4Ohm
DS Breakdown Voltage-Min 55V
Feedback Cap-Max (Crss) 10 pF
RoHS Status RoHS Compliant

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