BSP110,115

new-10%

Manufacturer part number:BSP110,115

Manufacturer:Nexperia USA Inc.

Description:NEXPERIA - BSP110,115 - MOSFET Transistor, N Channel, 150 mA, 100 V, 5 ohm, 5 V, 2 V RoHS Compliant: Yes

Case Package:SOT-23

Datasheet:BSP110,115 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Contact Plating	Tin
Mounting Type	Surface Mount
Package / Case	TO-261-4, TO-261AA
Surface Mount	YES
Number of Pins	3
Weight	4.535924g
Transistor Element Material	SILICON
Operating Temperature	-65°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	1997
Series	TrenchMOS™
JESD-609 Code	e3
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	4
ECCN Code	EAR99
Resistance	10Ohm
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	40
Pin Count	4
JESD-30 Code	R-PDSO-G4
Number of Elements	1
Power Dissipation-Max	6.25W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	6.25W
Case Connection	DRAIN
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	10 Ω @ 150mA, 5V
Vgs(th) (Max) @ Id	2V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds	40pF @ 10V
Current - Continuous Drain (Id) @ 25°C	520mA Tc
Drive Voltage (Max Rds On,Min Rds On)	5V
Vgs (Max)	±20V
Continuous Drain Current (ID)	520mA
Threshold Voltage	2V
Gate to Source Voltage (Vgs)	20V
Max Dual Supply Voltage	100V
Drain to Source Breakdown Voltage	100V
Feedback Cap-Max (Crss)	6 pF
Height	1.7mm
Length	6.7mm
Width	3.7mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	RoHS Compliant
Lead Free	Lead Free