BUK661R8-30C,118

new-10%

Manufacturer part number:BUK661R8-30C,118

Manufacturer:Nexperia USA Inc.

Description:MOSFET N-CH 30V 120A D2PAK

Case Package:SOT-23

Datasheet:BUK661R8-30C,118 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	12 Weeks
Contact Plating	Tin
Mounting Type	Surface Mount
Package / Case	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Surface Mount	YES
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tape & Reel (TR)
Published	2011
Series	Automotive, AEC-Q101, TrenchMOS™
JESD-609 Code	e3
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
Additional Feature	LOGIC LEVEL COMPATIBLE
Technology	MOSFET (Metal Oxide)
Terminal Form	GULL WING
Pin Count	3
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Power Dissipation-Max	263W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	263W
Case Connection	DRAIN
Turn On Delay Time	43 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	1.9m Ω @ 25A, 10V
Vgs(th) (Max) @ Id	2.8V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds	10918pF @ 25V
Current - Continuous Drain (Id) @ 25°C	120A Tc
Gate Charge (Qg) (Max) @ Vgs	168nC @ 10V
Rise Time	93ns
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±16V
Fall Time (Typ)	142 ns
Turn-Off Delay Time	272 ns
Continuous Drain Current (ID)	120A
Gate to Source Voltage (Vgs)	16V
Max Dual Supply Voltage	30V
Drain to Source Breakdown Voltage	30V
Avalanche Energy Rating (Eas)	870 mJ
Radiation Hardening	No
RoHS Status	Non-RoHS Compliant