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C3M0120100K

C3M0120100K

C3M0120100K

Cree/Wolfspeed

SiCFET (Silicon Carbide) N-Channel Tube 155m Ω @ 15A, 15V ±15V 350pF @ 600V 21.5nC @ 15V 1000V TO-247-4

SOT-23

C3M0120100K Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 16 Weeks
Mounting Type Through Hole
Package / Case TO-247-4
Surface Mount NO
Operating Temperature -55°C~150°C TJ
Packaging Tube
Series C3M™
Published 2016
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
Technology SiCFET (Silicon Carbide)
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Reference Standard IEC-60747-8-4
JESD-30 Code R-PSFM-T4
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 83W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 155m Ω @ 15A, 15V
Vgs(th) (Max) @ Id 3.5V @ 3mA
Input Capacitance (Ciss) (Max) @ Vds 350pF @ 600V
Current - Continuous Drain (Id) @ 25°C 22A Tc
Gate Charge (Qg) (Max) @ Vgs 21.5nC @ 15V
Drain to Source Voltage (Vdss) 1000V
Drive Voltage (Max Rds On,Min Rds On) 15V
Vgs (Max) ±15V
Drain Current-Max (Abs) (ID) 22A
Drain-source On Resistance-Max 0.155Ohm
Pulsed Drain Current-Max (IDM) 50A
DS Breakdown Voltage-Min 1000V
RoHS Status RoHS Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $9.444648 $9.444648
10 $8.910046 $89.10046
100 $8.405704 $840.5704
500 $7.929909 $3964.9545
1000 $7.481047 $7481.047
C3M0120100K Product Details

C3M0120100K Overview


As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 350pF @ 600V.The drain current is the maximum continuous current this device can conduct, which is 22A.Pulsed drain current is maximum rated peak drain current 50A.A normal operation of the DS requires keeping the breakdown voltage above 1000V.This transistor requires a drain-source voltage (Vdss) of 1000V.In order to reduce power consumption, this device uses a drive voltage of 15V volts (15V).

C3M0120100K Features


based on its rated peak drain current 50A.
a 1000V drain to source voltage (Vdss)


C3M0120100K Applications


There are a lot of Cree/Wolfspeed
C3M0120100K applications of single MOSFETs transistors.


  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching

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