BSC096N10LS5ATMA1

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BSC096N10LS5ATMA1

Manufacturer part number:BSC096N10LS5ATMA1

Manufacturer:Infineon Technologies

Description:BSC096N10LS5ATMA1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website

Case Package:SOT-23

Datasheet:BSC096N10LS5ATMA1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	13 Weeks
Mounting Type	Surface Mount
Package / Case	8-PowerTDFN
Surface Mount	YES
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Series	OptiMOS™ 5
Part Status	Active
Number of Terminations	5
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	FLAT
Reach Compliance Code	compliant
JESD-30 Code	R-PDSO-F5
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	3W Ta 83W Tc
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	9.6m Ω @ 20A, 10V
Vgs(th) (Max) @ Id	2.3V @ 36μA
Input Capacitance (Ciss) (Max) @ Vds	2100pF @ 50V
Current - Continuous Drain (Id) @ 25°C	40A Tc
Gate Charge (Qg) (Max) @ Vgs	14.6nC @ 4.5V
Drain to Source Voltage (Vdss)	100V
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Drain Current-Max (Abs) (ID)	72A
Drain-source On Resistance-Max	0.0096Ohm
Pulsed Drain Current-Max (IDM)	287A
DS Breakdown Voltage-Min	100V
Avalanche Energy Rating (Eas)	45 mJ