BUK7109-75AIE,118

new-10%

Manufacturer part number:BUK7109-75AIE,118

Manufacturer:Nexperia USA Inc.

Description:MOSFET N-CH 75V 75A D2PAK

Case Package:SOT-23

Datasheet:BUK7109-75AIE,118 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Contact Plating	Tin
Mounting Type	Surface Mount
Package / Case	TO-263-5, D2Pak (4 Leads + Tab), TO-263BB
Surface Mount	YES
Number of Pins	5
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tape & Reel (TR)
Published	1997
Series	Automotive, AEC-Q101, TrenchMOS™
JESD-609 Code	e3
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	4
ECCN Code	EAR99
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Form	GULL WING
Pin Count	5
JESD-30 Code	R-PSSO-G4
Number of Elements	1
Power Dissipation-Max	272W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	272W
Case Connection	DRAIN
Turn On Delay Time	35 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	9m Ω @ 50A, 10V
Vgs(th) (Max) @ Id	4V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds	4700pF @ 25V
Current - Continuous Drain (Id) @ 25°C	75A Tc
Gate Charge (Qg) (Max) @ Vgs	121nC @ 10V
Rise Time	108ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	100 ns
Turn-Off Delay Time	185 ns
Continuous Drain Current (ID)	120A
Gate to Source Voltage (Vgs)	20V
Max Dual Supply Voltage	75V
Drain-source On Resistance-Max	0.009Ohm
Drain to Source Breakdown Voltage	75V
Pulsed Drain Current-Max (IDM)	480A
Avalanche Energy Rating (Eas)	739 mJ
FET Feature	Current Sensing
Radiation Hardening	No
RoHS Status	RoHS Compliant