BUK965R8-100E,118

new-10%

Manufacturer part number:BUK965R8-100E,118

Manufacturer:Nexperia USA Inc.

Description:MOSFET N-CH 100V 120A D2PAK

Case Package:SOT-23

Datasheet:BUK965R8-100E,118 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	12 Weeks
Contact Plating	Tin
Mounting Type	Surface Mount
Package / Case	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Surface Mount	YES
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tape & Reel (TR)
Published	2014
Series	Automotive, AEC-Q101, TrenchMOS™
JESD-609 Code	e3
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
Additional Feature	AVALANCHE RATED
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Terminal Form	GULL WING
Pin Count	3
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	357W Tc
Operating Mode	ENHANCEMENT MODE
Power Dissipation	357W
Case Connection	DRAIN
Turn On Delay Time	81 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	5.8m Ω @ 25A, 5V
Vgs(th) (Max) @ Id	2.1V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds	17460pF @ 25V
Current - Continuous Drain (Id) @ 25°C	120A Tc
Gate Charge (Qg) (Max) @ Vgs	133nC @ 5V
Rise Time	168ns
Drive Voltage (Max Rds On,Min Rds On)	5V
Vgs (Max)	±10V
Fall Time (Typ)	148 ns
Turn-Off Delay Time	237 ns
Continuous Drain Current (ID)	120A
Gate to Source Voltage (Vgs)	10V
Max Dual Supply Voltage	100V
Drain-source On Resistance-Max	0.0058Ohm
Drain to Source Breakdown Voltage	100V
Pulsed Drain Current-Max (IDM)	597A
Radiation Hardening	No
RoHS Status	ROHS3 Compliant