FDD6780A

new-10%

Manufacturer part number:FDD6780A

Manufacturer:ON Semiconductor

Description:MOSFET N-CH 25V 16.4A DPAK

Case Package:SOT-23

Datasheet:FDD6780A Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tape & Reel (TR)
Series	PowerTrench®
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Resistance	8.6MOhm
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Form	GULL WING
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Power Dissipation-Max	3.7W Ta 32.6W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	3.7W
Case Connection	DRAIN
Turn On Delay Time	7 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	8.6m Ω @ 16.4A, 10V
Vgs(th) (Max) @ Id	3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	1235pF @ 13V
Current - Continuous Drain (Id) @ 25°C	16.4A Ta 30A Tc
Gate Charge (Qg) (Max) @ Vgs	24nC @ 10V
Rise Time	3ns
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	3 ns
Turn-Off Delay Time	16 ns
Continuous Drain Current (ID)	16.4A
Gate to Source Voltage (Vgs)	20V
Drain Current-Max (Abs) (ID)	48A
Drain to Source Breakdown Voltage	25V
Avalanche Energy Rating (Eas)	24 mJ
Height	2.39mm
Length	6.73mm
Width	6.22mm
Radiation Hardening	No
RoHS Status	RoHS Compliant
Lead Free	Lead Free