APT60M80L2VRG

new-10%

Manufacturer part number:APT60M80L2VRG

Manufacturer:Microsemi Corporation

Description:MOSFET N-CH 600V 65A TO-264MAX

Case Package:SOT-23

Datasheet:APT60M80L2VRG Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Lifecycle Status	IN PRODUCTION (Last Updated: 1 month ago)
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-264-3, TO-264AA
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	1997
Series	POWER MOS V®
JESD-609 Code	e1
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Terminal Finish	TIN SILVER COPPER
Additional Feature	AVALANCHE RATED
Voltage - Rated DC	600V
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Current Rating	65A
Pin Count	3
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	833W Tc
Operating Mode	ENHANCEMENT MODE
Power Dissipation	833W
Case Connection	DRAIN
Turn On Delay Time	14 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	80m Ω @ 32.5A, 10V
Vgs(th) (Max) @ Id	4V @ 5mA
Input Capacitance (Ciss) (Max) @ Vds	13300pF @ 25V
Current - Continuous Drain (Id) @ 25°C	65A Tc
Gate Charge (Qg) (Max) @ Vgs	590nC @ 10V
Rise Time	24ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Fall Time (Typ)	31 ns
Turn-Off Delay Time	70 ns
Continuous Drain Current (ID)	65A
Gate to Source Voltage (Vgs)	30V
Drain-source On Resistance-Max	0.08Ohm
Pulsed Drain Current-Max (IDM)	260A
Radiation Hardening	No
RoHS Status	RoHS Compliant
Lead Free	Lead Free