BUK9880-55,135

new-10%

Manufacturer part number:BUK9880-55,135

Manufacturer:Nexperia USA Inc.

Description:MOSFET N-CH 55V 7.5A SOT223

Case Package:SOT-23

Datasheet:BUK9880-55,135 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Contact Plating	Tin
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-261-4, TO-261AA
Number of Pins	73
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Series	Automotive, AEC-Q101, TrenchMOS™
JESD-609 Code	e3
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	4
ECCN Code	EAR99
Additional Feature	ESD PROTECTED, LOGIC LEVEL COMPATIBLE
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	40
Pin Count	4
JESD-30 Code	R-PDSO-G4
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	8.3W Tc
Operating Mode	ENHANCEMENT MODE
Power Dissipation	1.8W
Case Connection	DRAIN
Turn On Delay Time	10 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	80m Ω @ 5A, 5V
Vgs(th) (Max) @ Id	2V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds	650pF @ 25V
Current - Continuous Drain (Id) @ 25°C	7.5A Tc
Rise Time	30ns
Drive Voltage (Max Rds On,Min Rds On)	5V
Vgs (Max)	±10V
Fall Time (Typ)	30 ns
Turn-Off Delay Time	30 ns
Continuous Drain Current (ID)	7.5A
Gate to Source Voltage (Vgs)	10V
Drain Current-Max (Abs) (ID)	3.5A
Drain-source On Resistance-Max	0.08Ohm
Drain to Source Breakdown Voltage	55V
Pulsed Drain Current-Max (IDM)	40A
Avalanche Energy Rating (Eas)	30 mJ
Radiation Hardening	No
RoHS Status	RoHS Compliant
Lead Free	Lead Free