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BUK9Y12-55B,115

BUK9Y12-55B,115

BUK9Y12-55B,115

Nexperia USA Inc.

MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 11m Ω @ 20A, 10V ±15V 2880pF @ 25V 32nC @ 5V SC-100, SOT-669

SOT-23

BUK9Y12-55B,115 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 12 Weeks
Contact Plating Tin
Mounting Type Surface Mount
Package / Case SC-100, SOT-669
Surface Mount YES
Number of Pins 4
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Series Automotive, AEC-Q101, TrenchMOS™
Published 2010
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Terminal Form GULL WING
Pin Count 4
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 106W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 106W
Case Connection DRAIN
Turn On Delay Time 29 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 11m Ω @ 20A, 10V
Vgs(th) (Max) @ Id 2.15V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 2880pF @ 25V
Current - Continuous Drain (Id) @ 25°C 61.8A Tc
Gate Charge (Qg) (Max) @ Vgs 32nC @ 5V
Rise Time 78ns
Drive Voltage (Max Rds On,Min Rds On) 5V 10V
Vgs (Max) ±15V
Fall Time (Typ) 63 ns
Turn-Off Delay Time 100 ns
Continuous Drain Current (ID) 61.8A
JEDEC-95 Code MO-235
Gate to Source Voltage (Vgs) 15V
Max Dual Supply Voltage 55V
Radiation Hardening No
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $6.180720 $6.18072
10 $5.830868 $58.30868
100 $5.500819 $550.0819
500 $5.189452 $2594.726
1000 $4.895709 $4895.709
BUK9Y12-55B,115 Product Details

BUK9Y12-55B,115 Overview


As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 2880pF @ 25V.This device conducts a continuous drain current (ID) of 61.8A, which is the maximum continuous current transistor can conduct.When the device is turned off, a turn-off delay time of 100 ns occurs as the input capacitance charges before drain current conduction commences.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 29 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 15V.With 55V power, it supports a dual voltage supply of up to maximum.In order to reduce power consumption, this device uses a drive voltage of 5V 10V volts (5V 10V).

BUK9Y12-55B,115 Features


a continuous drain current (ID) of 61.8A
the turn-off delay time is 100 ns


BUK9Y12-55B,115 Applications


There are a lot of Nexperia USA Inc.
BUK9Y12-55B,115 applications of single MOSFETs transistors.


  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching

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