BUK9Y14-80E,115

new-10%

Manufacturer part number:BUK9Y14-80E,115

Manufacturer:Nexperia USA Inc.

Description:MOSFET N-CH 80V LFPAK

Case Package:SOT-23

Datasheet:BUK9Y14-80E,115 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	12 Weeks
Mounting Type	Surface Mount
Package / Case	SC-100, SOT-669
Surface Mount	YES
Number of Pins	4
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tape & Reel (TR)
Published	2014
Series	Automotive, AEC-Q101, TrenchMOS™
JESD-609 Code	e3
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	4
Terminal Finish	Tin (Sn)
Additional Feature	AVALANCHE RATED
Technology	MOSFET (Metal Oxide)
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
Reach Compliance Code	not_compliant
[email protected] Reflow Temperature-Max (s)	30
Pin Count	4
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	147W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
Turn On Delay Time	15.3 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	14m Ω @ 15A, 10V
Vgs(th) (Max) @ Id	2.1V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds	4640pF @ 25V
Current - Continuous Drain (Id) @ 25°C	62A Tc
Gate Charge (Qg) (Max) @ Vgs	28.9nC @ 5V
Rise Time	24.6ns
Drive Voltage (Max Rds On,Min Rds On)	5V
Vgs (Max)	±10V
Fall Time (Typ)	24.7 ns
Turn-Off Delay Time	45.3 ns
Continuous Drain Current (ID)	62A
JEDEC-95 Code	MO-235
Gate to Source Voltage (Vgs)	15V
Max Dual Supply Voltage	80V
Drain to Source Breakdown Voltage	80V
Pulsed Drain Current-Max (IDM)	250A
Avalanche Energy Rating (Eas)	79.6 mJ
RoHS Status	ROHS3 Compliant