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UMT2907AT106

UMT2907AT106

UMT2907AT106

ROHM Semiconductor

UMT2907AT106 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ROHM Semiconductor stock available on our website

SOT-23

UMT2907AT106 Datasheet

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Specifications
Name Value
Type Parameter
Factory Lead Time 13 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SC-70, SOT-323
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2006
JESD-609 Code e1
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish TIN SILVER COPPER
HTS Code 8541.21.00.75
Subcategory Other Transistors
Voltage - Rated DC -60V
Max Power Dissipation 200mW
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating -600mA
[email protected] Reflow Temperature-Max (s) 10
Base Part Number T2907A
Pin Count 3
Number of Elements 1
Element Configuration Single
Power - Max 200mW
Transistor Application SWITCHING
Gain Bandwidth Product 200MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 1.6V
Max Collector Current 600mA
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 150mA 10V
Current - Collector Cutoff (Max) 100nA
Vce Saturation (Max) @ Ib, Ic 1.6V @ 50mA, 500mA
Collector Emitter Breakdown Voltage 60V
Transition Frequency 200MHz
Collector Emitter Saturation Voltage -1.6V
Max Breakdown Voltage 60V
Collector Base Voltage (VCBO) -60V
Emitter Base Voltage (VEBO) -5V
hFE Min 50
Continuous Collector Current -600mA
VCEsat-Max 0.6 V
Turn Off Time-Max (toff) 100ns
Collector-Base Capacitance-Max 7pF
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.036992 $0.036992
500 $0.027200 $13.6
1000 $0.022667 $22.667
2000 $0.020795 $41.59
5000 $0.019435 $97.175
10000 $0.018079 $180.79
15000 $0.017484 $262.26
50000 $0.017192 $859.6
UMT2907AT106 Product Details

UMT2907AT106 Overview


As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 100 @ 150mA 10V.The collector emitter saturation voltage is -1.6V, giving you a wide variety of design options.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 1.6V @ 50mA, 500mA.A -600mA continuous collector voltage is necessary to achieve high efficiency.An emitter's base voltage can be kept at -5V to gain high efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of -600mA.As a result, the part has a transition frequency of 200MHz.Input voltage breakdown is available at 60V volts.A maximum collector current of 600mA volts can be achieved.

UMT2907AT106 Features


the DC current gain for this device is 100 @ 150mA 10V
a collector emitter saturation voltage of -1.6V
the vce saturation(Max) is 1.6V @ 50mA, 500mA
the emitter base voltage is kept at -5V
the current rating of this device is -600mA
a transition frequency of 200MHz

UMT2907AT106 Applications


There are a lot of ROHM Semiconductor UMT2907AT106 applications of single BJT transistors.

  • Driver
  • Inverter
  • Muting
  • Interface

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