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2N2102S

  • 2N2102S - 2N2102S datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Microsemi Corporation stock available on our website
  • 2N2102S - 2N2102S datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Microsemi Corporation stock available on our website

2N2102S

2N2102S

Microsemi Corporation

2N2102S datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Microsemi Corporation stock available on our website

SOT-23

2N2102S Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 12 Weeks
Mount Through Hole
Package / Case TO-5
Number of Pins 3
Transistor Element Material SILICON
Published 2007
JESD-609 Code e0
Pbfree Code no
Part StatusActive
Number of Terminations 3
ECCN Code EAR99
Terminal Finish TIN LEAD
Max Power Dissipation5W
Terminal Position BOTTOM
Terminal FormWIRE
Pin Count3
Number of Elements 1
Polarity NPN
Power Dissipation5W
Collector Emitter Voltage (VCEO) 65V
Max Collector Current 1A
DC Current Gain-Min (hFE) 40
Radiation HardeningNo
RoHS StatusNon-RoHS Compliant
In-Stock:286 items

Pricing & Ordering

QuantityUnit PriceExt. Price
100$26.80940$2680.94

2N2102S Product Details

2N2102S Overview


Collector current can be as low as 1A volts at its maximum.

2N2102S Features



2N2102S Applications


There are a lot of Microsemi Corporation 2N2102S applications of single BJT transistors.

  • Driver
  • Interface
  • Inverter
  • Muting

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