PBSS302NDH Overview

As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 250 @ 2A 2V.As it features a collector emitter saturation voltage of 330mV, it allows for maximum design flexibility.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 450mV @ 600mA, 6A.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.In this part, there is a transition frequency of 150MHz.There is a breakdown input voltage of 40V volts that it can take.Maximum collector currents can be below 4A volts.

PBSS302NDH Features

the DC current gain for this device is 250 @ 2A 2V
a collector emitter saturation voltage of 330mV
the vce saturation(Max) is 450mV @ 600mA, 6A
the emitter base voltage is kept at 5V
a transition frequency of 150MHz

PBSS302NDH Applications

There are a lot of Nexperia USA Inc. PBSS302NDH applications of single BJT transistors.

• Interface
• Muting
• Inverter
• Driver