2SA2060(TE12L,F) Overview

In this device, the DC current gain is 200 @ 300mA 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 200mV @ 33mA, 1A.If the emitter base voltage is kept at 7V, a high level of efficiency can be achieved.In extreme cases, the collector current can be as low as 2A volts.

2SA2060(TE12L,F) Features

the DC current gain for this device is 200 @ 300mA 2V
the vce saturation(Max) is 200mV @ 33mA, 1A
the emitter base voltage is kept at 7V

2SA2060(TE12L,F) Applications

There are a lot of Toshiba Semiconductor and Storage 2SA2060(TE12L,F) applications of single BJT transistors.

• Driver
• Interface
• Inverter
• Muting