MJD50T4G Overview

This device has a DC current gain of 30 @ 300mA 10V, which is the ratio between the base current and the collector current.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 1V.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1V @ 200mA, 1A.An emitter's base voltage can be kept at 5V to gain high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a 1A current rating.There is a transition frequency of 10MHz in the part.Input voltage breakdown is available at 400V volts.The maximum collector current is 1A volts.

MJD50T4G Features

the DC current gain for this device is 30 @ 300mA 10V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 200mA, 1A
the emitter base voltage is kept at 5V
the current rating of this device is 1A
a transition frequency of 10MHz

MJD50T4G Applications

There are a lot of ON Semiconductor MJD50T4G applications of single BJT transistors.

• Inverter
• Interface
• Driver
• Muting