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KSC2682YS

KSC2682YS

KSC2682YS

ON Semiconductor

KSC2682YS datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

KSC2682YS Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Through Hole
Package / Case TO-225AA, TO-126-3
Supplier Device Package TO-126-3
Operating Temperature 150°C TJ
Packaging Bulk
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Base Part Number KSC2682
Power - Max 1.2W
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 160 @ 10mA 5V
Current - Collector Cutoff (Max) 1μA ICBO
Vce Saturation (Max) @ Ib, Ic 500mV @ 5mA, 50mA
Voltage - Collector Emitter Breakdown (Max) 180V
Current - Collector (Ic) (Max) 100mA
Frequency - Transition 200MHz
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.739122 $0.739122
10 $0.697285 $6.97285
100 $0.657816 $65.7816
500 $0.620581 $310.2905
1000 $0.585454 $585.454
KSC2682YS Product Details

KSC2682YS Overview


This device has a DC current gain of 160 @ 10mA 5V, which is the ratio between the base current and the collector current.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.There is no device package available from the supplier for this product.The device exhibits a collector-emitter breakdown at 180V.

KSC2682YS Features


the DC current gain for this device is 160 @ 10mA 5V
the vce saturation(Max) is 500mV @ 5mA, 50mA
the supplier device package of TO-126-3

KSC2682YS Applications


There are a lot of ON Semiconductor KSC2682YS applications of single BJT transistors.

  • Muting
  • Interface
  • Driver
  • Inverter

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