KSC2682YS datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
KSC2682YS Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mounting Type
Through Hole
Package / Case
TO-225AA, TO-126-3
Supplier Device Package
TO-126-3
Operating Temperature
150°C TJ
Packaging
Bulk
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Base Part Number
KSC2682
Power - Max
1.2W
Transistor Type
NPN
DC Current Gain (hFE) (Min) @ Ic, Vce
160 @ 10mA 5V
Current - Collector Cutoff (Max)
1μA ICBO
Vce Saturation (Max) @ Ib, Ic
500mV @ 5mA, 50mA
Voltage - Collector Emitter Breakdown (Max)
180V
Current - Collector (Ic) (Max)
100mA
Frequency - Transition
200MHz
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.739122
$0.739122
10
$0.697285
$6.97285
100
$0.657816
$65.7816
500
$0.620581
$310.2905
1000
$0.585454
$585.454
KSC2682YS Product Details
KSC2682YS Overview
This device has a DC current gain of 160 @ 10mA 5V, which is the ratio between the base current and the collector current.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.There is no device package available from the supplier for this product.The device exhibits a collector-emitter breakdown at 180V.
KSC2682YS Features
the DC current gain for this device is 160 @ 10mA 5V the vce saturation(Max) is 500mV @ 5mA, 50mA the supplier device package of TO-126-3
KSC2682YS Applications
There are a lot of ON Semiconductor KSC2682YS applications of single BJT transistors.