ZTX751STZ datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website
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ZTX751STZ Datasheet
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Specifications
Name
Value
Type
Parameter
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
E-Line-3, Formed Leads
Number of Pins
3
Weight
453.59237mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~200°C TJ
Packaging
Tape & Reel (TR)
Published
1997
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn)
Subcategory
Other Transistors
Voltage - Rated DC
-60V
Max Power Dissipation
1W
Terminal Form
WIRE
Peak Reflow Temperature (Cel)
260
Current Rating
-2A
Frequency
140MHz
[email protected] Reflow Temperature-Max (s)
40
Pin Count
3
Reference Standard
CECC
Number of Elements
1
Element Configuration
Single
Power Dissipation
1W
Transistor Application
SWITCHING
Gain Bandwidth Product
140MHz
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
60V
Max Collector Current
2A
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 500mA 2V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
500mV @ 200mA, 2A
Collector Emitter Breakdown Voltage
60V
Transition Frequency
100MHz
Max Breakdown Voltage
60V
Frequency - Transition
100MHz
Collector Base Voltage (VCBO)
80V
Emitter Base Voltage (VEBO)
-5V
Continuous Collector Current
-2A
Height
4.01mm
Length
4.77mm
Width
2.41mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
ZTX751STZ Product Details
ZTX751STZ Overview
DC current gain in this device equals 100 @ 500mA 2V, which is the ratio of the base current to the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 500mV @ 200mA, 2A.Continuous collector voltages of -2A should be maintained to achieve high efficiency.If the emitter base voltage is kept at -5V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is -2A.There is a transition frequency of 100MHz in the part.Single BJT transistor can take a breakdown input voltage of 60V volts.Collector current can be as low as 2A volts at its maximum.
ZTX751STZ Features
the DC current gain for this device is 100 @ 500mA 2V the vce saturation(Max) is 500mV @ 200mA, 2A the emitter base voltage is kept at -5V the current rating of this device is -2A a transition frequency of 100MHz
ZTX751STZ Applications
There are a lot of Diodes Incorporated ZTX751STZ applications of single BJT transistors.